Proton scattering in a silicon carbide film was numerically simulated. Distribution histograms of the energy imparted to recoil atoms were obtained. Two energy ranges were considered when analyzing the histograms. In the first range of “low” energies, individual Frenkel pairs with closely spaced components were created. In the second range, recoil atoms had energies sufficient for generating a cascade of displacements. This gave rise to microscopic regions with high density of vacancies and vacancy complexes of various kinds.

Energy Distribution of Recoil Atoms and Formation of Radiation Defects in Silicon Carbide Films under Proton Irradiation. A.M.Ivanov, V.V.Kozlovski, N.B.Strokan, A.A.Lebedev: Semiconductors, 2011, 45[2], 141-4