The relationship between film thickness and dislocation spacing in interfacial arrays was studied by using a criterion which was based upon the energy difference between the relaxed film configuration and a partially relaxed or unrelaxed configuration. It was shown that arrays with a lower dislocation density formed during relaxation processes that were more gradual. The stability of arrays was examined, and new bounds were placed on their stable range.

Dislocation Arrays at the Interface between an Epitaxial Layer and its Substrate. V.A.Lubarda: Math. Mech. Solids, 1998, 3[4], 411-31