The progress made towards developing epitaxial graphene as a material for carbon electronics was reviewed. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene electronic properties were considered. Although graphene grown on both polar faces of SiC were considered, the considerations focussed upon graphene grown on the (00•¯1) C-face of SiC. It was noted that the unique properties of C-face multilayer epitaxial graphene had become apparent. These films behaved electronically like a stack of nearly independent graphene sheets rather than a thin Bernal stacked graphite sample. The origins of multilayer graphene electronic behaviour were its unique highly ordered stacking of non-Bernal rotated graphene planes. While these rotations did not significantly affect the interlayer interactions, they did break the stacking symmetry of graphite. It was this broken symmetry that led to each sheet behaving like isolated graphene planes.

Multilayer Epitaxial Graphene Grown on the SiC (000-1) Surface; Structure and Electronic Properties. M.Sprinkle, J.Hicks, A.Tejeda, A.Taleb-Ibrahimi, P.Le Fèvre, F.Bertran, H.Tinkey, M.C.Clark, P.Soukiassian, D.Martinotti, J.Hass, E.H.Conrad: Journal of Physics D, 2010, 43[37], 374006