Graphene surfaces were scrutinised for topographic peculiarities, which occurred naturally or were introduced. High-angle-annular-dark-field and bright-field lattice images of graphene acquired in an aberration-corrected scanning transmission electron microscope, in conjunction with electron energy-loss spectroscopy, showed vacancy- and ad-atom-related point defects, as well as the presence of hydrogen. In boron implanted graphene, the edges of graphene sheets appeared to be capture centres for boron atoms. Furthermore, rippling effects in the graphene sheets could be revealed by fast Fourier transform procedures; these help visualise changes in the bond length projection arising from inclinations of the sheet.

Atomic Scale Graphene Landscapes – Natural, Dosed and Doped. U.Bangert, M.Gass, A.L.Bleloch, R.R.Nair: Journal of Physics - Conference Series, 2010, 241[1], 012098