The effects of temperature upon helium implanted SiC were investigated through X-ray diffraction measurements. At low fluences and elevated temperature, dynamic annealing occurred resulting from point defect recombination. At high fluences, the dynamic annealing taking place in the near surface region was concomitant with the formation of a thin and deep highly strained region resulting from the accumulation of interstitial atoms drifted to the deep damaged region under the actions of strain gradient and temperature.

Strain-Induced Drift of Interstitial Atoms in SiC Implanted with Helium Ions at Elevated Temperature. S.Leclerc, M.F.Beaufort, A.Declémy, J.F.Barbot, Journal of Nuclear Materials, 2010, 397[1-3], 132-4