Local recombination properties of threading screw and edge dislocations in 4H–SiC epitaxial layers were studied using electron beam-induced current. The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombination activity. Temperature dependence of electron beam-induced current contrast of dislocations suggested that their recombination activity was controlled by deep energy levels in the vicinity of dislocation cores. This work showed that the type of dislocation (screw or edge) could be identified from analysis of electron beam-induced current contrast.

Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H–SiC Homoepitaxial Layers. S.I.Maximenko, J.A.Freitas, R.L.Myers-Ward, K.K.Lew, B.L.VanMil, C.R.Eddy, D.K.Gaskill, P.G.Muzykov, T.S.Sudarshan: Journal of Applied Physics, 2010, 108[1], 013708