The results of recent electron paramagnetic resonance studies of the EI4 electron paramagnetic resonance centre in electron-irradiated high-purity semi-insulating 6H SiC were presented. Higher signal intensities and better resolution compared with previous studies had enabled a more detailed study to be made of the hyperfine structure. Based upon the observed hyperfine structure due to the interaction with Si and C neighbours, the effective spin S=1, the C1h-symmetry and the annealing behaviour, a carbon vacancy–carbon antisite complex in the neutral charge state, VCVCCSi0, with the vacancies and the antisite in the basal plane, was suggested as a new defect model for the centre.

The EI4 EPR Centre in 6H SiC. P.Carlsson, N.T.Son, B.Magnusson, J.Isoya, N.Morishita, T.Ohshima, E.Janzén: Physica Scripta, 2010, T141[1], 014013