Non-destructive characterization of stacking faults in 4H-SiC epilayers was carried out by photoluminescence mapping to clarify the effects of excitation power and measurement temperature. The photoluminescence mapping pattern of in-grown stacking faults fades in above a certain excitation intensity (e.g., 8.2W/cm2 in this study) because of the super-linear excitation power dependence of the photoluminescence emission of the stacking faults. Bar-shaped stacking faults were identified in photoluminescence mapping at low temperatures. The photoluminescence intensity of bar-shaped stacking faults decreases with increasing temperature with an activation energy of 53meV. Possible mechanisms of the emission of the stacking faults were also considered.

Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers. M.Nakamura, M.Yoshimoto: Japanese Journal of Applied Physics, 2010, 49[1], 010202