Microstructural analysis was used to observe Mg-related defects in highly Mg-doped AlN on an undoped AlN layer grown by metalorganic vapour phase epitaxy. Pyramidal defects at a density of 1015/cm3 were observed in the Mg-doped AlN layer with a Mg concentration of 2.5  x  1019/cm3. The size and density of the pyramidal defects decreased at a low Mg-doped AlN layer with a Mg concentration. When the Mg concentration was high, defects of different shapes were formed in the Mg-doped AlN layer.

Defects in Highly Mg-Doped AlN. K.Nonaka, T.Asai, K.Nagamatsu, M.Iwaya, S.Kamiyama, H.Amano, I.Akasaki: Physica Status Solidi A, 2010, 207[6], 1299–301