A theoretical model to explain the sharp transition to low-mobility regime in n-type GaN layers was proposed. It was shown that this peculiarity of the mobility versus free carrier concentration could be interpreted with the well-known Read model when the scattering due to charged dislocation walls was included in consideration. An agreement with experiments was found above the critical value of carrier density.

Mobility in Epitaxial GaN: Limitation of Electron Transport Due to Dislocation Walls. S.Krasavin: Journal of Physics - Conference Series, 2010, 248[1], 012052