Diffuse X-ray scattering was combined with a Monte Carlo simulation method for the determination of the dislocation density in thin hetero-epitaxial layers. As a model, GaN epitaxial layers containing threading dislocations perpendicular to the surface were considered. The densities of particular types of threading dislocations following from the comparison of measured and simulated distributions of diffusely scattered X-ray intensity were compared with the dislocation densities determined by etching. Good agreement was found.

X-Ray Diffuse Scattering from Threading Dislocations in Epitaxial GaN Layers. M.Barchuk, V.Holý, B.Miljević, B.Krause, T.Baumbach, J.Hertkorn, F.Scholz: Journal of Applied Physics, 2010, 108[4], 043521