Conductive nanowires were fabricated in GaN thin film by selectively doping of Al along threading dislocations. Electrical current flow localized at the nanowires was directly measured by a contact mode atomic force microscope. The current flow at the nanowires was considered to be Frenkel–Poole emission mode, suggesting the existence of the deep acceptor level along the nanowires as a possible cause of the current flow. The results obtained in this study showed the possibility for fabricating nanowires using pipe-diffusion at dislocations in solid thin films.

Electrical Current Flow at Conductive Nanowires Formed in GaN Thin Films by a Dislocation Template Technique. S.Amma, Y.Tokumoto, K.Edagawa, N.Shibata, T.Mizoguchi, T.Yamamoto, Y.Ikuhara: Applied Physics Letters, 2010, 96[19], 193109