The characteristics of confined epitaxial growth were investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channelling contrast imaging was used to identify extended defects over large (tens of microns) areas. Using this method, it was illustrated that by confining the epitaxial growth, high quality GaN could be grown with dislocation densities approaching zero.

Approach for Dislocation Free GaN Epitaxy. J.K.Hite, M.A.Mastro, C.R.Eddy: Journal of Crystal Growth, 2010, 312[21], 3143-6