This work presented an experimental study on the identification and quantification of different types of dislocations in GaN grown by low-pressure solution growth. A reliable defect selective etching procedure in a NaOH-KOH melt was developed and validated using transmission electron microscopy that permits to define groups of etch pits that belong each to dislocations with a specific Burgers vector. This way a comparably fast method was provided for determining the total, the specific dislocation densities and the type of dislocation in a statistically representative way. The results for the solution grown samples were compared to those obtained for MOCVD GaN.

Selective Etching of Dislocations in GaN Grown by Low-Pressure Solution Growth. I.Y.Knoke, P.Berwian, E.Meissner, J.Friedrich, H.P.Strunk, G.Müller: Journal of Crystal Growth, 2010, 312[20], 3040-5