A theory was presented for the simulation of a coherent GaN quantum dot, with an adjacent pure edge threading dislocation, by using a finite element method. The piezoelectric effects and the strain modified band edges were investigated in the framework of multi-band k · p theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition were obtained via the density matrix approach and perturbation expansion method. The results indicated that the strain distribution of the threading dislocation affected the electronic structure. Moreover, the ground state transition behaviour was also influenced by the position of the adjacent threading dislocation.

Electronic and Optical Properties of GaN/AlN Quantum Dots with Adjacent Threading Dislocations. Y.Han, P.F.Lu, Z.Y.Yu, W.J.Yao, Z.H.Chen, B.Y.Jia, Y.M.Liu: Chinese Physics B, 2010, 19[4], 047302