The characterization of line defects in interfaces, as observed using high-resolution electron microscopy, was investigated. The characterization was carried out by mapping a closed circuit, which was initially constructed around a defect, onto a reference space. This process was generalized so as to incorporate operations other than translations, and was also expressed mathematically and thereby related to recent developments which were based upon symmetry theory. Examples of the characterization of dislocations in twin interfaces in hexagonal close-packed crystals, and of an interfacial dispiration, were given as examples.

On the Characterisation of Interfacial Defects using High Resolution Electron Microscopy. R.C.Pond: Interface Science, 1995, 2[4], 299-310