The present work reports on resistive switching and voltage nonlinearity in barium titanate based metal-insulator-metal (MIM) devices. Au/BaTiO3/Al device exhibited unipolar resistive behavior. In high resistance state, the J–E characteristic agreed well with the space charge limited current (SCLC) theory and predicted the presence of a discrete set of traps at 0.74eV below the conduction band. This trap level could be ascribed to the second ionization of oxygen vacancies. Oxygen vacancies could also be responsible for the nonlinear character of Au/BaTiO3/Au capacitor. This feature was confirmed by studying the C–V characteristics as a function of the oxygen addition in the sputtering gas.

Impact of Oxygen Vacancy Related Defects on the Electrical Properties of BaTiO3 Based Metal-Insulator-Metal Devices. F.El Kamel, P.Gonon: IOP Conference Series - Materials Science and Engineering, 2010, 8[1], 012030