The nature of intrinsic defects in ZnO films grown by metal organic vapour phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.

Changing Vacancy Balance in ZnO by Tuning Synthesis Between Zinc/Oxygen Lean Conditions. V.Venkatachalapathy, A.Galeckas, A.Zubiaga, F.Tuomisto, A.Y.Kuznetsov: Journal of Applied Physics, 2010, 108[4], 046101