Cu thin films were deposited on p-type Si (100) substrates by magnetron sputtering at room temperature. The interface reaction and atomic diffusion of Cu/SiO2/Si (100) systems were studied by X-ray diffraction and Rutherford back-scattering spectrometry. Some significant results could be obtained. The onset temperature of interdiffusion for Cu/SiO2/Si(100) was 350C. With the annealing temperature increasing, the interdiffusion became more apparent. The calculated diffusion activation energy was about 0.91eV. For the Cu/SiO2/Si (100) systems copper silicides were not formed below an annealing temperature of 350C. The formation of the copper silicides phase was observed when the annealing temperature arrives at 450C.

Atomic Diffusion in Annealed Cu/SiO2/Si(100) System Prepared by Magnetron Sputtering. C.Bo, Y.H.Jia, G.P.Li, X.M.Chen: Chinese Physics B, 2010, 19[2], 026601