A self-consistent model of growth and structure of semiconductor nanowires was proposed. The crystal phase of group III–V semiconductor nanowires was studied. The critical radius of the transition from the hexagonal wurtzite structure to the cubic structure of zincblende type was calculated as a function of parameters of the system of materials and the gaseous medium supersaturation. The model presented here was applicable to both gas-phase and molecular beam epitaxies and allowed one to calculate the probability of formation of the wurtzite and zincblende phases under various deposition conditions.

Self-Consistent Model of Nanowire Growth and Crystal Structure with Regard to the Adatom Diffusion. M.V.Nazarenko, N.V.Sibirev, V.G.Dubrovskii: Technical Physics, 2011, 56[2], 311-5