An approach to the hetero-epitaxy of lattice-mismatched semiconductors was described. The theory, referred to as nanoheteroepitaxy, showed that the 3-dimensional stress-relief mechanisms that were active when an epilayer was nucleated as an array of nano-scale islands on a compliant patterned substrate, would significantly reduce the strain energy in the epilayer and markedly increase the critical thickness. Calculations showed that, using the scale of patterning that was achievable by means of advanced lithography (10 to 100nm), mismatch dislocations could be eliminated from heterojunctions that were mismatched by as much as 4.2%.

Nanoheteroepitaxy D.Zubia, S.D.Hersee: Journal of Applied Physics, 1999, 85[9], 6492-6