A detailed investigation and comparison of low-temperature cathodoluminescent and electrical properties of a dislocation network was presented. The correlations between the cathodoluminescent, electron beam induced current, and CV measurements using the DC electric bias as a parameter were established and analyzed in the scope of the calculated theoretical model. A new cathodoluminescent measurement technique that was complimentary to conventional space charge region spectroscopy methods such as DLTS and MCTS was proposed and the first experimental results using this new approach were described. A shallow dislocation-related level Ev+Et=0.1eV was shown to be responsible for D1 dislocation-related luminescence line.

Correlation between Cathodoluminescent and Electrical Properties of Dislocation Network in the Space Charge Region of Schottky-Diode. A.Bondarenko, O.Vyvenko, I.Isakov, O.Kononchuk: Physica Status Solidi C, 2011, 8[4], 1273–7