Transmission electron microscopy was instrumental in advancing the field of crystalline defect analysis. Conventional transmission electron microscopic imaging techniques, such as bright field, dark field and weak beam dark field (g–3g) imaging, were well-documented in the scientific literature, with simulation methods readily available for each. The present contribution highlights the use of a field-emission transmission electron microscope, operated in scanning transmission electron microscopy mode, as a viable tool for defect analysis. Common techniques such as two-beam diffraction contrast and zone axis imaging were applied to defect analysis; both experimental and computational results were presented. Effects of experimental parameters such as camera length, beam divergence angle, and diffraction aperture placement were also discussed and illustrated by both experimental and computed micrographs of stacking faults.

Systematic Row and Zone Axis STEM Defect Image Simulations. P.J.Phillips, M.J.Mills, M.De Graef: Philosophical Magazine, 2011, 91[16], 2081-101