A theory of charge transport in semiconductors showing built-in polarization (polar) was developed in the presence of basal stacking faults. The theory was based upon quantum tunnelling in conjunction with the semi-classical description of diffusive charge transport. It was shown that the presence of basal stacking faults led to anisotropy in carrier transport. The theory was applied to carrier transport in gallium nitride films consisting of a large number basal stacking faults, and the result was compared with experimental data.

Charged Basal Stacking Fault Scattering in Nitride Semiconductors. A.Konar, T.Fang, N.Sun, D.Jena: Applied Physics Letters, 2011, 98[2], 022109