A single atomic defect on an ionic crystal surface was manipulated at the atomic level using an atomic force microscope. During raster scanning, the defect was manipulated at near the tip–sample distance and at room temperature. The defect, which was imaged as a sharp half-moon shape, moved continuously if the tip was close to the sample surface. The defect randomly moved along a zigzag or straight path or jumps long distances. The movement of the defect on an insulator was complex in contrast to that on semiconductors. The defect moved suddenly owing to the tip approaching the surface when the distance feedback was overshot under the condition of a large difference in frequency shift between the feedback set point and a weak interaction on the defect.

Lateral Manipulation of Single Defect on Insulating Surface Using Noncontact Atomic Force Microscope. I.Yi, R.Nishi, M.Abe, Y.Sugimoto, S.Morita: Japanese Journal of Applied Physics, 2011, 50[1], 015201