The method of so-called controlled atomic defects, realized by changing the alloy composition along definite sections in the Gibbs triangle, was applied to ternary phases of two types: ternary compounds and solid solutions based upon binary compounds. The overview of extensive experimental material, which were obtained when studying I–III–VI2 ternary phases and IV–X–VI phases based upon IV–VI binary compounds was given. The controlled introduction of non-stoichiometric and impurity defects of various types into I–III–VI2 and IV–VI compounds was realized using the controlled atomic defects method. It was shown that there was a distinct correlation between the composition, type and concentration of impurity and non-stoichiometric defects, on the one hand, and the crystal structure and physical properties, on the other. The results obtained proved the fruitfulness of using the controlled atomic defects method for the development of means for controlling the properties of complex semiconductor phases.

Mechanism of “Controlled Atomic Defects”: Extension to the Ternary Systems. E.Rogacheva: Japanese Journal of Applied Physics, 2011, 50, 05FB01