The thermodynamic properties of diamond-cubic and zincblende semiconductors containing point defects were considered using the statistical moment method; taking into account the higher (fourth) order anharmonic vibrational terms in the Helmholtz free energy. The various thermodynamic quantities were derived in closed analytical form. The thermal expansion coefficient, the specific heats at constant volume and those at constant pressure, and the isothermal compressibility were derived analytically for semiconductors with defects. The statistical moment method calculated thermodynamic quantities of Si and GaAs with defects were in good agreement with experimental results.

Thermodynamic Properties of Semiconductors with Defects. V.V.Hung, L.D.Thanh: Materials Sciences and Applications, 2011, 2, 1225-32