The problem of describing the displacement and stress fields that were associated with straight misfit dislocations in a multi-layer that involved a number of hetero-interfaces or free surfaces was reduced to the inversion of 2 independent sets of linear equations. The displacement field of a single translation dislocation was obtained as the limit of an infinite spacing between 2 misfit dislocations. The multi-layer could be limited by 1 (epitaxy) or 2 (foil) free surfaces. The simplicity and power of the method was illustrated by solving classical unsolved questions such as the stress field that was associated with an edge interfacial translation dislocation in a layer sandwiched between 2 semi-infinite media. Another problem was the displacement field of 2 different interfacial edge translation dislocations in a thin bi-crystal. A final case was the stress field that was associated with a multi-layer of alternating GaAs and Si layers which contained a single array of edge misfit dislocations along one of the hetero-interfaces.

Elasticity Theory of Straight Dislocations in a Multi-Layer. R.Bonnet: Physical Review B, 1996, 53[16], 10978-82