Cu thin films were deposited on Si (100) substrates by neutral cluster beams and ionized cluster beams. The atomic diffusion and interface reaction between the Cu films and the Si substrates of as-deposited and annealed at different temperatures (230, 450, 500 and 600C) were investigated by Rutherford back-scattering spectrometry and X-ray diffraction. Some significant results were obtained on the following aspects: (1) For the Cu/Si(100) samples prepared by neutral cluster beams and ionized cluster beams at Va = 0kV, atomic diffusion phenomena were observed clearly in the as-deposited samples. With the increase of annealing temperature, the interdiffusion becomes more apparent. However, the diffusion intensities of the Rutherford back-scattering spectra of the Cu/Si(100) films using neutral cluster beams were always higher than that of the Cu/Si(100) films using ionized cluster beams at Va=0kV in the as-deposited and samples annealed at the same temperature. The compound of Cu3Si was observed in the as-deposited samples. (2) For the Cu/Si(100) samples prepared by ionized cluster beams at Va = 1, 3, 5kV, atomic diffusion phenomena were observed in the as-deposited samples at Va = 1, 5kV. For the samples prepared at Va = 3kV, the interdiffusion phenomenon was observed up to a 500C annealing temperature.

Diffusion and Interface Reaction of Cu/Si (100) Films Prepared by Cluster Beam Deposition. X.X.Gao, Y.H.Jia, G.P.Li, S.J.Cho, K.Hee: Chinese Physics Letters, 2011, 28[3], 033601