Iron films were deposited onto the Si (100) substrates by DC-magnetron sputtering and subsequently annealed (873 to 1273K, 2h). Rutherford backscattering analysis was performed to determine the elemental depth profiles and the oxidation process in samples. The silicides formation was characterized by X-ray diffraction. The results indicate that annealing at 873K causes only a small mixing of the Fe and Si atoms near the Fe/Si interface, while the 973K annealing enhances the atomic diffusion and yields to a graded concentration distribution of Fe and Si. The metal-rich silicides Fe1+xSi (0 ≤ x ≤ 2) start to nucleate and grow at 973K and only α- FeSi2 formation was observed after annealing (1273K, 2h).

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering. J.Zhang, Q.Xie, Y.Liang, W.Zeng, Q.Xiao, Q.Chen, V.Borjanović, M.Jakšić, M.Karlusic, B.Gržeta, K.Yamada, J.Luo: Physics Procedia, 2011, 11, 126-9