Resistivity recovery data of Cr4 alloy doped with carbon (Cr4C) after irradiation with 5MeV electrons were presented and compared with resistivity recovery data on non-doped Cr4 alloy. Analysis of the defect- and short-range order-induced parts of RR had confirmed the proposed earlier scheme of the evolution of Frenkel pair defects on post-irradiation anneal in Cr4 and Cr9. Vacancies start free migration at around 205–210K; however, the related peak of stage III was invisible in conventional resistivity recovery plots. Interstitial atoms trapped in stage-I at configurations of several Cr atoms start their long-range migration at 220K. Migrating vacancies were captured by carbon atoms in Cr4C while interstitial atoms were not. Dissociation of vacancies from carbon atoms at 350K gave rise to a decoration of carbon atoms with Cr atoms. Indications were seen that a release of vacancies captured by atoms of residual nitrogen takes place around 250–260K.

Recovery of Electrical Resistivity, Short-Range Order Formation and Migration of Defects in Electron-Irradiated Fe–4Cr Alloy Doped with Carbon. A.L.Nikolaev: Philosophical Magazine, 2011, 91[6], 879-98