The generation and structures of first- and second-order pyramidal <c+a> dislocations, 1/3{10•1}<¯1¯1•3> and 1/3{11•2}<¯1¯1•3>, were determined in pure magnesium using molecular dynamics simulation. In particular, simulations of [11•0]- and [10•0]-textured polycrystalline Mg display pyramidal <c+a> slip nucleated at grain boundaries. Both the first- and second-order dislocations appeared as a partial or extended edge type. In the [11•0]-textured Mg, the first-order pyramidal <c+a> slip occurred with 1/6<¯20•3> partials or 1/9[0¯1•3] + 1/18[¯62•3] + [0¯23] extended dislocations. Secondary pyramidal dislocations were created with edge type from grain boundaries in the [10•0] texture. The pyramidal <c+a> slip on the {11•2} plane could extend to the basal plane, on which it was terminated by a screw dislocation on the {10•1} plane.

Grain-Boundary Activated Pyramidal Dislocations in Nano-Textured Mg by Molecular Dynamics Simulation. D.H.Kim, F.Ebrahimi, M.V.Manuel, J.S.Tulenko, S.R.Phillpot: Materials Science and Engineering A, 2011, 528[16-17], 5411-20