The nature of grown-in dislocations in melt-spun ribbons of the compound were studied using transmission electron microscopy. These dislocations had b = <100> and were predominantly screw in character. They were dissociated into two partial dislocations which bounded a complex stacking fault according to the reaction,

[100]  ½[100] + CSF + ½[100]

The habit plane of the fault was shown to be {012}. These observations were compared with previous studies performed on isostructural V3Si, and the consequences of the observed dissociation for the plastic deformation of A15 compounds were considered.

Concerning the Dissociation of Grown-In Dislocations in Melt Spun Ribbons of the Intermetallic Compound Nb3Al. M.Aindow, J.Shyue, T.A.Gaspar, H.L.Fraser: Philosophical Magazine Letters, 1991, 64[2], 59-65