In Al-rich γ-phase material which was deformed at room temperature, <011] dislocations usually dissociated into a 1/6<112] partial and a 1/6<154] partial which was located in the leading and trailing positions, respectively. It was argued here that, apart from load orientations in which the critical resolved shear stress for <112]{111} slip was attained, ½<112] dislocations were sessile by-products of the decomposition of <011] dislocations. In spite of a significant relative abundance, it was concluded that they hardly contributed to strain.

Properties of <011]{111} Slip in Al-Rich γ-TiAl - I. Dissociation, Locking and Decomposition of <011] Dislocations at Room Temperature. F.Gregori, P.Veyssière: Philosophical Magazine A, 2000, 80[12], 2913-32