Stacking faults and antiphase boundaries in the {113} planes of this L10-type compound were introduced into the perfect crystal by a shear process. The structures and stacking sequences of the defects were studied. Their energies were calculated by using an embedded atom method. The results showed that metastable stacking faults and antiphase boundaries existed in the (113) plane, whereas no metastable complex stacking faults could be found. The estimated energies of the intrinsic stacking faults, extrinsic stacking faults and antiphase boundaries were 1195, 1217 and 976mJ/m2, respectively.

Planar Defects in {113} Planes of L10-Type TiAl; their Structures and Energies. Z.C.Li, S.H.Whang: Philosophical Magazine A, 1993, 68[1], 169-82