Atomic configurations of various lattice defects, dislocations and stacking faults introduced by plastic deformation and ion bombardment, were investigated by high-resolution electron microscopy for CdS and CdSe single crystals having the wurtzite structure. Both perfect and dissociated dislocations on the basal plane were observed to be stable in both crystals. Image-processed micrographs were used to analyze the strain fields around dislocations. The energy of the intrinsic stacking fault on the basal plane was estimated, from the widths of the dissociated dislocations, to be 14mJ/m2 for both CdS and CdSe.

Lattice Image Observations of Defects in CdS and CdSe. K.Suzuki, S.Takeuchi, M.Shino, K.Kanaya, H.Iwanaga: Transactions of the Japan Institute of Metals, 1983, 24[6], 435-42