Single crystals were indented using a Vickers indenter at room temperature and 77K. The dislocations thus introduced were studied by using the weak-beam method of electron microscopy. The dislocations had a Burgers vector of (a/2)<110>, and were dissociated into 2 Shockley partials. The stacking-fault energy decreased from 43mJ/m2 at 923K to 15mJ/m2 at 77K.

Temperature Dependence of the Stacking-Fault Energy in GaAs. W.J.Moon, T.Umeda, H.Saka: Philosophical Magazine Letters, 2003, 83[4], 233-47