The internal stresses caused by thermal stressing of Si-doped GaAs was estimated to be about 22MPa from the bowed-out segments of screw dislocations. This value was equal to the upper yield stress at 740K of the same specimens. All of the grown-in dislocations which were observed were dissociated, and the dissociation width of screw dislocations was 2.8 to 4.4nm. As these values were almost same as those of screw dislocations induced by plastic deformation, Coulomb forces between the two partials of grown-in dislocations were negligible. The stacking-fault energy deduced for grown-in dislocations of Si-doped GaAs was 39mJ/m2.

Thermal Stress and Stacking Fault Energy Estimated by TEM Observations of Grown-in Dislocations in Si-Doped GaAs Single Crystals. Y.Nakada, T.Imura: Physica Status Solidi A, 1987, 103[1], 85-91