A model for determining the critical mismatch and mismatch gradient parameters was developed. When these parameters were higher than the critical values the formation of partial misfit dislocations became energetically preferable. A polar diagram of critical mismatch versus substrate orientation and the dependence of mismatch and gradient upon the energy of stacking faults for the (100) orientation of the interface were calculated. The critical values for the heteroepitaxial system, GaAsP/GaAs(100) were verified experimentally. Doping of the GaAsP films with tellurium to up to 1018/cm3 resulted in a lowering of the critical mismatch from 7.4 x 10-3 to 2 x 10-3, due to a lower stacking-fault energy in doped films as compared to films which were undoped, or doped with Zn. The decrease in stacking-fault energy was more than 30mJ/m2.

The Formation of Partial Misfit Dislocations during Heteroepitaxy. A.K.Gutakovskii, S.I.Stenin, B.G.Zakharov: Physica Status Solidi A, 1981, 67[1], 299-304