The stacking fault energies of silicon (58mJ/m2) and germanium (75mJ/m2) were determined. Within the limits of accuracy, the energy was found not to change upon doping with 8 x 1018/cm3 of boron and 7 x 1017/cm3 of phosphorus. Freezing-in dislocations under high shear stress revealed a different behaviour for screw dislocations: whereas these dislocations became wider in pure and p-silicon, they became narrower in n-silicon. From this it was concluded that the ratio of the mobilities of the two 30° partials was different in n- and p-silicon.

TEM of Dislocations under High Stress in Germanium and Doped Silicon. H.Alexander, H.Eppenstein, H.Gottschalk, S.Wendler: Journal of Microscopy, 1980, 118[1], 13–21