The atomic configurations and excess energies of {113} stacking faults in covalent semiconductors were calculated here (table 2) for the first time using the tight-binding type electronic theory (bond orbital model) and the Born-Mayer repulsive potential. Two types of stacking-fault were defined. In the case of type-A faults, interstitial atoms were located on the matrix (110) planes and the associated displacement was of (1/5)[111] type. In the case of type-B faults, interstitial atoms were located on the matrix (1/8)(110) type layer positions.

Electron Irradiation-Induced Lattice Defects in Covalent Semiconductors: {113} Stacking Fault. K.Masuda, K.Kojima: Journal of the Physical Society of Japan, 1983, 52[1], 10-3