The climb dissociation of a perfect dislocation, b = (a/2)<110>, in the (a/2)<110>{110} glide system was studied, by means of high-resolution electron microscopy, in heteroepitaxial Ge layers which had been grown onto (001)Si. The partial dislocations had Burgers vectors of b = (a/4)<110>. The energy of the stacking fault was deduced, from the dissociation widths of partial dislocations, to be 120mJ/m2. The formation of this configuration was explained in terms of a short-circuit diffusion process. No dissociation of the dislocation on the {110} glide plane was observed here.

Dislocation in the ½ <110>{110} Glide System in the Diamond Lattice - Dissociation by Climb. M.Albrecht, H.P.Strunk, D.Stenkamp, W.Jäger: Physica Status Solidi A, 1993, 137[2], 549-55