Degradation mechanisms in 1.3μm wavelength edge‐emitting light‐emitting diodes, aged for 1000h at 150C and 150mA, were studied using transmission electron microscopy. During the degradation, three types of defect structure were generated at the interface between the InGaAsP active layer and an n‐InP buffer layer along the light-emitting stripe. These were: a) ½<100>{100} faulted extrinsic dislocation loops formed by condensation of point defects, similar to those previously observed in degraded channeled substrate buried heterostructure lasers, b) long ½<101> dislocation clusters developed along the active stripe, and c) 1/3[111] and 1/3[1¯11] faulted Frank loops developed from the condensation of point defects onto ½[101] dislocation via dissociative reactions:

½[101]  1/6[1¯21] + 1/3[111]

and

½[101]  1/6[121] + 1/3[1¯11]

Defect Mechanisms in Degradation of InGaAsP Long‐Wavelength Edge‐Emitting Light-Emitting Diodes. S.N.G.Chu, S.Nakahara, L.C.Luther, H.W.Krautter: Journal of Applied Physics, 1991, 69[10], 6974-8