The dissociation of dislocations in undoped and Zn-doped single crystals was investigated by means of transmission electron microscopy. By using the weak-beam technique, dissociation widths were obtained which ranged from 5 to 15nm for screw and edge dislocations, respectively. No significant difference in the dissociation widths for undoped and Zn-doped samples was detected. By using anisotropic elasticity theory, a stacking fault energy of 18.7mJ/m2 was estimated. High-resolution transmission electron microscopy revealed that the dissociation widths varied within a wide range for a given type of dislocation. In contrast to results which were obtained using weak-beam techniques, - and -dislocations of 60 type exhibited differing dissociation behaviors. The explanation of these observations required the consideration of additional forces which acted on partial dislocations in the high-resolution specimens.

On the Dissociation of Dislocations in InP. M.Luysberg, D.Gerthsen: Physica Status Solidi A, 1994, 146[1], 157-72