The nature and behaviour of misfit dislocations induced in InP/InGaAsP double-heterostructures grown by liquid-phase epitaxy were studied using transmission electron microscopy. Almost all of the misfit dislocations were of 60° type, and pure edge dislocations and screw dislocations were very rarely generated. Other interactions between the misfit dislocations induced various types of reaction such as network formation, dissociation and pinning. The stacking fault energy in InP was determined, from the distance between dissociated dislocations in the weak-beam image, to be 55mJ/m2.

Transmission Electron Microscopic Observation of Misfit Dislocation in InP/InGaAsP Double-Heterostructures. O.Ueda, S.Komiya, S.Yamazaki, Y.Kishi, I.Umebu, T.Kotani: Japanese Journal of Applied Physics, 1984, 23[7], 836-41