End-on images of isolated dislocations, normal dipoles and Z-shaped faulted dipoles in deformed crystals were obtained by high-resolution electron microscopy using the axial illumination technique with many beams. The stacking fault energy was evaluated from the configuration of partial dislocations in these images. The effect of doping with impurities was also investigated. The stacking fault energy was determined to be 47.0mJ/m2 in pure crystals and was found to decrease with increasing concentration of doped phosphorus atoms.

Impurity Effect in Stacking Fault Energy of Silicon Crystals Studied by High Resolution Electron Microscopy. M.Sato, K.Sumino, K.Hiraga: Physica Status Solidi A, 1981, 68[2], 567–77