The electronic contribution to the interaction energy between impurities and edge dislocations, which was related to the existence of localized electronic states at a dislocation, was calculated within the framework of a simple model. It was shown that the interaction energy varied from 0.01 to 0.1 of the bandwidth, and depended upon the lattice structure, the Burgers vector, the type of impurity (donor or acceptor) and the conduction-band filling. These effects were expected to be important in intermetallics which had the B2 structure, where plastic deformation was governed by dislocations with a Burgers vector of a<100>.

The Effect of Electronic Localized States at Dislocations upon the So-Called Chemical Impurity-Dislocation Interaction. A.O.Anokhin, M.L.Galperin, J.N.Gornostyrev, M.I.Katsnelson, A.V.Trefilov: Philosophical Magazine B, 1996, 73[6], 845-60