The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low (about 13MPa), and deformed easily; even at 150C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5 to 0.7eV. The intrinsic stacking fault energy was deduced to be 7 to 9mJ/m2 from the dissociation width (about 20nm) of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.

Yield Strength and Dislocation Mobility in Plastically Deformed ZnSe. I.Yonenaga, K.Watanabe, S.Itoh, S.Fujiwara, K.Yoshino: Physica B, 2006, 376-377, 771-4