Stacking faults associated with climb-dissociated basal and prism plane dislocations in sapphire (α-Al2O3) after plastic deformation at high temperatures were studied. In both cases, the fault vector was 1/3<10•0> and only the cation sub-lattice was faulted. The fault energies on (01•0)- and (11•0)-type planes were similar, and between 0.1 and 0.25J/m2. Analysis of the geometry of the 1/3<10•0> fault showed that one vacancy and two distinct interstitial faults were possible in this structure. One of the interstitial faults was thought to have the lowest energy.

Stacking Fault Energy in Sapphire (α-Al2O3). K.D.P.Lagerlöf, T.E.Mitchell, A.H.Heuer, J.P.Rivière, J.Cadoz, J.Castaing, D.S.Phillips: Acta Metallurgica, 1984, 32[1], 97-105