A new mechanism was proposed for the formation of 1-dimensional electronic structures in semiconductor crystals. The mechanism was based upon the controllable low-temperature glide of dislocations. Moving dislocations generated associations of intrinsic point defects in the form of 1-dimensional chains, and decay of these associations was impeded by low temperatures.

Low-Temperature Motion of Dislocations as a Possible Mechanism of Formation of One-Dimensional Electronic Structures in Semiconductor Crystals. N.I.Tarbaev, G.A.Shepelskii, E.A.Salkov: Pisma Zhurnal Eksp. Teor. Fiz., 1997, 66[10], 639-44 (JETP Letters, 1997, 66[10], 675-80)